Today, Samsung announced the commencement of mass producing the industry’s first 4-bit (QLC, quad-level cell) 4-terabyte SATA solid-state drive (SSD) for consumers.
Based on 1-terabit (Tb) V-NAND with outstanding performance equivalent to the company’s 3-bit design, Samsung’s QLC SSD is expected to bring a new level of efficiency to consumer SSDs.
Samsung’s new 4-bit SATA SSD will herald a massive move to terabyte-SSDs for consumers,
said Jaesoo Han, executive vice president of memory sales & marketing at Samsung Electronics.
As we expand our lineup across consumer segments and to the enterprise, 4-bit terabyte-SSD products will rapidly spread throughout the entire market.
Samsung will be able to efficiently produce a 128GB memory card for smartphones that will lead the charge toward higher capacities for high-performance memory storage with its new 1Tb 4-bit V-NAND chip,
Samsung’s new 4-bit SATA SSD will herald a massive move to terabyte-SSDs for consumers,” said Jaesoo Han, executive vice president of memory sales & marketing at Samsung Electronics. “As we expand our lineup across consumer segments and to the enterprise, 4-bit terabyte-SSD products will rapidly spread throughout the entire market.
In addition, the company expects to provide M.2 NVMe SSDs for the enterprise this year and begin mass production of 4-bit fifth-generation V-NAND. This will considerably expand its SSD lineup to meet the growing demand for faster, more reliable performance across a wide span of applications, such as next generation data centers, enterprise servers, and enterprise storage.
*1Tb (128GB) x 32 = 4TB (4,096GB)
**Samsung’s mass production history of SSDs in bits per cell
| Year | Bit | Nodes | Chip Capacity | Drive Capacity |
| 2006 | 1-bit SLC (single-level cell) | 70nm-class | 4Gb | 32GB |
| 2010 | 2-bit MLC (multi-level cell) | 30nm-class | 32Gb | 512GB |
| 2012 | 3-bit TLC (triple-level cell) | 20nm-class | 64Gb | 500GB |
| 2018 | 4-bit QLC (quad-level cell) | 4th-gen V-NAND | 1Tb | 4 TB |
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